3A 30V Schottky Rectifier
ON Semiconductor Corp
Description
Product Description ...employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
Extremely Low vF Low Power Loss/High Efficiency Low Stored Charge, Majority Carrier ConductionMechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds Shipped in plastic bags, 5,000 per bag Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: 1N5820, 1N5821, 1N5822 Pb-Free Packages are Available
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