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2048Kx8 Nonvolatile SRAM
Texas Instruments

Description
The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The bq4017 uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM. The bq4017 has the same interface as industry-standard SRAMs and requires no external circuitry.
Features
Data retention in the absence of power Automatic write-protection during power-up/power-down cycles Conventional SRAM operation; unlimited write cycles 5-year minimum data retention in absence of power Battery internally isolated until power is applied

Related Datasheets
Part Number Description Category
•  BQ4016 1024Kx8 Nonvolatile SRAM ICs, Interface
•  BQ4017 2048Kx8 Nonvolatile SRAM ICs, Interface



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