( File format: PDF, 167.0kB )
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max)
ON Semiconductor Corp
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
Ideal for Coil-on-Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Cell Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Short-Circuit Withstand Capability Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
As the hyperlinked contents/websites are those of third parties, we cannot vouch for their accuracy or legitimacy.
Hot Articles
Most Popular Articles
Search EE Times India
Max's Cool Beans
Strange modes of transport and other "stuff"
Someone just pointed me at a YouTube video that claims to show the world's first e-powered multicopter flight...
