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Power MOSFET with Current Mirror FET 24V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror, SO-8 Lead Less QFN
ON Semiconductor Corp
Description
Product Description N-Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit while keeping a high accuracy in the linear region. This device takes advantage of the latest leadless QFN package to improve thermal transfer.
Features
Current Sense MOSFET ±3.5% Current Mirror Accuracy in Linear Region ±15% Current Mirror Accuracy in Low Current Saturation Region ESD Protected on the Main and the Mirror MOSFET Low Gate Charge Pb-Free Package is Available
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