What does FET stand for?
| Field Effect Transistor (FET) is a kind of transistor which relies on an electric field to control the shape and the conductivity of a channel in a semiconductor material. |
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| 2012-04-20 | Tunnel-FET biosensor claims ultra-sensitivity Tunnel-FET biosensor claims ultra-sensitivity |
| 2012-02-15 | Evaluation board for LM2731/LM2733 Read about the evaluation board supplied to demonstrate the operation of these parts and give information on its usage. |
| 2012-02-06 | Gate driver enables high power density TI's LM5114, a low-side gate driver designed for use with MOSFETs and Gallium-Nitride (GaN) power FETs enables high efficiency and power density. |
| 2012-01-24 | 1.2kV MOSFET aims at energy-efficient switching The UniSiC MOSFET offers energy efficient switching targeted at high performance power conversion applications in the alternative energy, industrial and consumer segments. |
| 2012-01-26 | Power tip: Discretes as alternative to integrated MOSFET drivers (Part 2) Here's a continuation of the discussion on simple FET gate drive circuits. It also looks into synchronous rectifier drives. |
| 2012-01-04 | Graphene mixer to speed up future electronics Chalmers researchers demo graphene FET mixer that can pave the way for future applications operating at extremely high frequencies. |
| 2011-09-28 | Biomaterial enables proton-based FET Biomaterial enables proton-based FET |
| 2011-09-29 | Significantly boost efficiency by going synchronous Here's a discussion on the virtues of synchronous power-conversion topologies. |
| 2011-08-23 | Dev't board aids 200V eGaN FET evaluation Dev't board aids 200V eGaN FET evaluation |
| 2011-08-05 | 125mm2 step-down regulator offers high efficiency TI introduces the TPS54062, a synchronous 50mA, 60V SWIFT step-down regulator with integrated FETs that claims to provide high efficiency and low noise performance in a solution size of only 125mm2. |
| 2011-06-30 | GaN FET power amp targets 1GHz CATV apps GaN FET power amp targets 1GHz CATV apps |
| 2011-06-24 | 100V gate driver designed for GaN FETs National Semiconductor releases the LM5113, a 100V, half-bridge, high-side and low-side GaN FET driver optimised for use in high-voltage power converters. |
| 2011-05-30 | Z-FET SiC MOSFET ups energy efficiency Z-FET SiC MOSFET ups energy efficiency |
| 2011-05-16 | Reverse battery charger protection Read about reverse-battery protection that protects a single cell lithium-ion battery charger and battery from damage due to backwards insertion. |
| 2011-02-04 | 50nm N-type junctionless silicon FET created 50nm N-type junctionless silicon FET created |
| 2011-01-25 | New memory tech enables power-proportional computing Researchers at North Carolina University have developed a "universal" memory technology, which uses a double floating-gate FET and enables computers to power down memories not currently being accessed. |
| 2011-01-25 | FET improves satellite broadcast antenna reception FET improves satellite broadcast antenna reception |
| 2010-12-24 | FET driver improves power supply efficiency FET driver improves power supply efficiency |
| 2010-12-15 | LED driver IC allows high PWM dimming ratios Supertex's three-channel LED driver IC packs three dimmer switch FET drivers that allow high PWM dimming ratios and independent fault management. |
| 2010-08-09 | Addressing the issues of high-performance FETs (Part 2) Package impedance, PCB layout, interconnect parasitic and switching speed are all critical factors influencing a MOSFET's performance in a power-supply circuit. This article addresses the common questions about today's high-performance FETs and discusses how to apply them. |
| 2010-08-03 | Addressing the issues of high-performance FETs (Part 1) Modern low-voltage MOSFETs are now available with on-resistance below 1mΩ. This article addresses the common questions about today's high-performance FETs and discusses how to apply them. |
| 2010-05-20 | 2.5A step-down converter packs 200mΩ high-side FET 2.5A step-down converter packs 200mΩ high-side FET |
| 2010-04-16 | MOSFETs with Schottky diode reduce conduction losses The integrated Schottky improves efficiency and waveforms by reducing dead time conduction losses facilitated by the integration into the same die as the primary FET structure . |
| 2010-04-12 | TMS320C6472 5V input power design, integrated FET DC/DC converters and controllers (8x C6472 TMS320C6472 5V input power design, integrated FET DC/DC converters and controllers (8x C6472 |
| 2010-04-05 | Expanding the voltage range of the HIP1020 FET driver Expanding the voltage range of the HIP1020 FET driver |
| 2010-03-29 | RF power transistors: comparative study of LDMOS vs. bipolar technology RF power transistors consist of two type of devices: bipolar junction (BJT) and field effect (FET). This application note discusses and compares their parameters and performances. |
| 2010-01-28 | LNB controller handles biasing up to four FETs Diodes Inc. has unveiled the ZXNB4204, LNB controller that handles FET and mixer biasing, channel detection and control, and offers a stable power supply for added LNB functionality. |
| 2009-11-13 | Snubbing the FET turn-off voltage in flyback converters Snubbing the FET turn-off voltage in flyback converters |
| 2009-08-10 | MOSFETs delivers low R DS(on) Vishay Intertechnology Inc. has introduced three new 500V MOSFETs that extend its Gen 6.2 n-channel planar FET technology to the TO-220, TO-220F and TO-247 packages. |
| 2009-05-25 | Infineon-IIT Bombay team touts ESD advance The joint team was able to explain the mechanisms behind electrostatic discharge in high-voltage FET devices. |
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