- Article
(27) -
Forum
(0) -
Blog
(0)
total search27 articles
sort by relevance
sort by date
| 2011-10-13 | Imec demos high-speed HBT for enhanced imaging Imec demos high-speed HBT for enhanced imaging |
| 2011-03-02 | Single stage Ku band LNA using BFU730F Read these circuit, layout, BOM and performance information on Ku band LNA equipped with NXP's BFU730F wide band transistor. |
| 2011-02-28 | Single stage 2.3_2.7GHz LNA with BFU730F The BFU730F is a discrete HBT that is produced using NXP Semiconductors' 110 GHz fT SiGe:C BiCmos process. |
| 2010-11-23 | High-linearity gain block amps target DC to 6000MHz range Avago Technologies rolls out the AVT-55689 and AVT-54689 gain that via the InGaP HBT technology boast of state-of-the-art reliability, temperature stability and performance consistency. provide low current consumption and robust electrostatic discharge protection. |
| 2008-09-15 | InGaP HBT vs. CMOS for mobile handset power amplifiers InGaP HBT vs. CMOS for mobile handset power amplifiers |
| 2006-12-20 | Use GaAs pHEMT/HBT devices in wireless and mobile designs Use GaAs pHEMT/HBT devices in wireless and mobile designs |
| 2008-06-24 | High-voltage HBT devices reduce system costs High-voltage HBT devices reduce system costs |
| 2008-05-15 | New active bias InGaP HBT performs better New active bias InGaP HBT performs better |
| 2007-02-27 | SiGe HBT transistor amplifiers roll for two-way radios SiGe HBT transistor amplifiers roll for two-way radios |
| 2006-07-06 | HBT power amps designed for linear WiMAX apps HBT power amps designed for linear WiMAX apps |
| 2006-02-28 | VCOs output 11.5GHz to 14.9GHz Hittite Microwave Corp. has extended its line of GaAs HBT monolithic microwave IC (MMIC) voltage-controlled oscillators with fundamental, half and quarter frequency outputs. |
| 2005-09-05 | HBTs deliver 0.75dB noise at 6GHz Infineon Technologies unveiled its new SiGe:C process technology for cost-effective, high-performance RF semiconductor devices. |
| 2001-06-06 | HMC313 biasing and impedance matching techniques This application note describes proper operation and an explanation of the external components needed in order to insure maximum performance from the HMC313 HBT MMIC amplifier. |
| 2001-10-08 | GaInP/GaAs HBT MMIC distributed amplifier DC 17GHz (NDA-210-D GaInP/GaAs HBT MMIC distributed amplifier DC 17GHz (NDA-210-D |
| 2001-10-08 | GaInP/GaAs HBT MMIC distributed amplifier DC 17GHz (NDA-212 GaInP/GaAs HBT MMIC distributed amplifier DC 17GHz (NDA-212 |
| 2002-06-20 | Mass production technology of large size III-V compound semiconductor expitaxial wafers for microwave devices by MOVPE This application note describes the mass production techniques for large diameter MOVPE wafers for microwave devices. |
| 2003-07-01 | Designing low-cost CDMA front-end receivers The constant pressure on RF design engineers to come up with low-cost RF solutions are remedied by RF Micro Devices' RF2870 small CDMA LNA/Mixer. |
| 2003-08-18 | NBB and NDA Series Reliability This application note provides additional information on component reliability with varying device junction temperature, and the effect of the package used on junction temperature. |
| 2003-08-18 | Design of PI and T Network Attenuators for Inter-Stage Buffering This application note discusses the design of PI and T network attenuators for Inter-Stage Buffering. |
| 2003-08-18 | NBB Series Assembly Notes This application note presents additional information for those planning to assemble an NBB Amplifier. |
| 2003-08-18 | NDA Series Assembly Notes This application note presents additional information for those planning to assemble an NDA Amplifier. |
| 2003-08-18 | Bias Scheme for NBB-Series Amplifiers This application note presents a schematic representation of the NBB-series amplifier. |
| 2003-08-18 | Evaluation Board Assembly Biasing Configuration This application note provides information on the evaluation board assembly supplied by RFMD, particularly the NBB and NDA series of amplifiers. |
| 2003-10-03 | CDMA/AMPS 4mm x 4mm Power Amplifier Modules This application note gives a general description and discusses the evaluation board, minimum test bench requirements, turn on procedures, and layout considerations of CDMA/AMPS 4mm x 4mm Power Amplifier Modules. |
| 2003-10-03 | AWT6111 CDMA/AMPS Power Amplifier This application note gives a general description and discusses the application board, minimum bench requirements, turn on procedures, and layout considerations of the AWT6111 CDMA/AMPS Power Amplifier. |
| 2004-12-03 | PCS CDMA 4mm-by-4mm power amplifier modules This app note discussed the 4mm-by-4mm HBT power amplifier modules designed for PCS CDMA handsets with a frequency band of 1850MHz to 1910MHz and operate from RF single Li-ion battery. |
| 2004-12-03 | KPCS CDMA 4mm-by-4mm power amplifier modules This app note demonstrates the 4mm-by-4mm hetero-junction bipolar transistor (HBT) power amplifier modules designed for South Korean PCS CDMA handsets. |
--- total search 27 articles, total 1 pages, The 1 Page ---
1
Most Popular Articles
Search EE Times India
Max's Cool Beans
Strange modes of transport and other "stuff"
Someone just pointed me at a YouTube video that claims to show the world's first e-powered multicopter flight...
