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| 2011-07-25 | HEXFET MOSFETs available in high-density PQFN package HEXFET MOSFETs available in high-density PQFN package |
| 2011-06-20 | PQFN 2x2mm MOSFET provides high power density International Rectifier reveals its HEXFET MOSFET silicon in a PQFN 2x2mm package offering ultra-compact, high density and efficient solution targeted at lower power applications. |
| 2010-07-23 | SOT-23 MOSFETs minimise RDS(on) to improve current handling IR unveils a family of SOT-23 HEXFET power MOSFETs for applications including battery charge and discharge switches, system and load switches, light load motor drives, and telecom equipment. |
| 2010-06-29 | MOSFETs utilise copper clip technology International Rectifier expands HEXFET power MOSFETs to offer a complete family of mid-voltage devices available in a 5mm x 6mm PQFN package with optimised copper clip and solder die. |
| 2010-02-26 | MOSFETs feature low thermal resistance <0.5°C/W International Rectifier debuts a family of HEXFET power MOSFETs featuring IR's latest silicon technology available in a 5mm x 6mm PQFN package with optimised copper clip and solder die. |
| 2009-08-17 | Low gate charge MOSFETs suit industrial apps International Rectifier rolls HEXFET power MOSFETs offering ultra low gate charge for industrial apps. |
| 2008-10-23 | MOSFETs feature low on-state resistance International Rectifier has unveiled a new range of trench HEXFET Power MOSFETs. |
| 2007-04-11 | MOSFET chipset features low package inductance International Rectifier has introduced a new DirectFET MOSFET chipset for high-current DC/DC converters used in notebook, high-end desktops and servers, and advanced telecom and datacom systems. |
| 2006-11-07 | Power MOSFET promises 95 per cent efficiency International Rectifier has released a power MOSFET called the IRF6641TRPBF which is a 200V HEXFET that uses DirectFET package technology and promises an efficiency of up to 95 per cent. |
| 2006-07-28 | Buck converter features cooling packaging, MOSFET IR's synchronous buck converter chipset features packaging with double-sided cooling and the latest HEXFET MOSFET technology. |
| 2006-07-19 | HEXFET MOSFETs provide improved synchronous rectification HEXFET MOSFETs provide improved synchronous rectification |
| 2006-05-23 | IR designs MOSFETs for switching converter apps International Rectifier (IR) has introduced negative-channel 60, 80 and 100V HEXFET MOSFETs for switching converter applications used in networking and communications systems. |
| 2006-04-12 | IR introduces four new HEXFET MOSFETs IR introduces four new HEXFET MOSFETs |
| 2006-03-14 | Synchronous rectifier IC boosts flyback design International Rectifier's SmartRectifier chipset comprises the IR1167 with external HEXFET MOSFETs, as the first high-efficiency solution that's viable from the standpoint of technology and cost. |
| 2005-12-26 | IR targets PoE applications with MOSFETs IR's IRF4000 is a 100V device integrating four HEXFET MOSFETs into a Power MLP package for Power-over-Ethernet applications. |
| 2005-12-21 | Power MOSFETs promises 30% part count reduction IR has introduced 75V and 100V HEXFET power MOSFETs enable a part count reduction of 30% or more in secondary synchronous rectification, full-bridge topology power supplies. |
| 2000-12-01 | ESD testing of MOS-Gated power transistors This application note analyzes the behavior of MOS-gated power transistors undergoing an ESD test, without discussing the fundamental premise that a capacitive discharge is a meaningful simulation of an ESD event. |
| 2000-12-01 | Assembly of FlipFET devices This application note introduces the FlipFET devices and discusses the assembly issues and PCB technology involved in their use. |
| 2005-08-31 | New MOSFET from IR offers 3.8-milliohm on-resistance International Rectifier expanded its family of high-performance 75V and 100V HEXFET synchronous rectification MOSFETs with the release of the 160A-rated, seven-pin IRF2907ZS-7PPbF. |
| 2003-06-20 | Wafer Level Package Technology This application note discusses the properties and functions of the Wafer Level Package technology |
| 2003-06-27 | Linear Power Amplifier Using Complementary HEXFETs This application note discusses the benefits of using complementary HEXFETs on a Linear Power Amplifier. |
| 2003-06-27 | Gate Drive Characteristics and Requirements for HEXFETs This application note discusses the basic characteristics and requirements for Gate Drives, in order to maximize their use in reference to HEXFET. |
| 2003-06-27 | How P-Channel HEXFET Power MOSFETs Can Simplify your Circuit How P-Channel HEXFET Power MOSFETs Can Simplify your Circuit |
| 2003-06-27 | Paralleling HEXFET Power MOSFETs Paralleling HEXFET Power MOSFETs |
| 2003-06-30 | Measuring HEXFET Characteristics Measuring HEXFET Characteristics |
| 2003-06-30 | IGBT Characteristics This application note discusses the basic functions and features of IGBTs. |
| 2003-06-30 | ESD Testing of MOS Gated Power Transistors This application note discusses the behavior of MOS-Gated power transistors undergoing an ESD test, without discussing the fundamental premise that a capacitive discharge is a meaningful simulation of an ESD event. |
| 2003-06-30 | Protecting IGBTs and MOSFETs from ESD This application note discusses how to protect IGBTS and MOSFETs from ESD and how HEXFET users can implement and benefit from similar ESD control programs. |
| 2005-02-01 | Improve DPAs with integrated modules Here's a practical way to enhance the performance and design cycle of distributed power architectures. |
| 2005-06-02 | Paralleling HEXFET power MOSFETs Paralleling HEXFET power MOSFETs |
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