What does IGBT stand for?
| IGBT stands for insulated gate bipolar transistor. Invented by C. Frank Wheatley Jr., IGBTs combine the simple gate drive characteristics of the MOSFETs with the high current and low saturation voltage capability of bipolar transistors. Hence, IGBTs have lower on-state voltage drop with high blocking voltage capabilities in addition to fast switching speeds. |
total search86 articles
sort by relevance
sort by date
| 2006-07-05 | IGBT can withstand 300mJ of avalanche energy IGBT can withstand 300mJ of avalanche energy |
| 2006-06-29 | MOSFET/IGBT driver with 1V max low-level output voltage MOSFET/IGBT driver with 1V max low-level output voltage |
| 2006-06-02 | IGBT modules target industrial apps IGBT modules target industrial apps |
| 2006-05-04 | IR's IGBTs reduce power dissipation up to 60% International Rectifier (IR) has introduced four 600V insulated-gate bipolar transistors (IGBTs) that are said to reduce power dissipation in inverters by up to 60 per cent. |
| 2005-12-16 | ICs integrate photoflash capacitor charger, IGBT drive ICs integrate photoflash capacitor charger, IGBT drive |
| 2001-08-20 | Gate-drive considerations for IGBT efficiency Gate-drive considerations for IGBT efficiency |
| 2001-08-20 | IGBT ratings and characteristics IGBT ratings and characteristics |
| 2001-08-20 | An introduction to IGBTs This application note provides an introduction to IGBTs outlining the device structures, mode of operation, ratings and characteristics for optimal use. |
| 2001-08-20 | Heatsink issues for IGBT modules Heatsink issues for IGBT modules |
| 2000-12-07 | ITC132 high-voltage micro to motor interface This application note presents an IGBT power stage that is designed to run three-phase AC induction motors with input signals from an ASB124 Motion Control Development Board. |
| 2005-08-08 | 'Field stop' IGBTs deliver winning punch Advanced Power Technology's new IGBT modules deliver from 20A to 600A for modules rated at 600V, 50A to 400A for 1,200V modules, and 50A to 300A for 1,700V products. |
| 2005-09-19 | Chip charges xenons in a flash Allegro's new photoflash capacitor charger ICs, which comprise a flyback converter with an internal 40V DMOS switch and IGBT driver, provide a highly integrated solution for Xenon photoflash, digital camera, and camera phone apps. |
| 2005-11-18 | IGBT modules screened to MIL-PRF-38534 test conditions IGBT modules screened to MIL-PRF-38534 test conditions |
| 2000-12-07 | Noise management in motor drives This application note discusses several techniques that simplify the design of noise management in motor drives |
| 2001-04-20 | Performance comparison of the new generation of IGBTs with MOSFETs at 150kHz This application note presents data collected from the operation of IGBTs in a hard-switched, double-ended feed forward converter switching at 150kHz. It also makes a comparison between these IGBTs and similarly rated MOSFETs in the same circuit. |
| 2001-04-23 | 8kW resonant converter for x-ray machines uses high speed power modules with integral liquid cooling This application note describes an innovative method for the removal of heat from the four IGBT power modules equipping a 48kW ZVS-mode resonant power converter for CT X-ray machines. |
| 2001-05-25 | New packages for pressure mounting This application note discusses the advantages of discrete power semiconductor packages and their mounting considerations. |
| 2001-08-20 | Electrostatic handling precautions This application note suggests some electrostatic precautions that should be considered when handling IGBTs. |
| 2002-12-02 | Short-circuit protection in a DIP-IPM device The article examines a scheme for setting recommended values of external current sensing resistor necessary in DIP-IPM short-circuit protection. |
| 2003-06-20 | Using the Current Sensing IR212X Gate Drive ICs This application note discusses the procedures and benefits in using the current sensing IR212X Gate Drive ICs |
| 2003-06-27 | Gate Drive Characteristics and Requirements for HEXFETs This application note discusses the basic characteristics and requirements for Gate Drives, in order to maximize their use in reference to HEXFET. |
| 2003-06-30 | IGBT Characteristics IGBT Characteristics |
| 2003-06-30 | Guidelines for the Assembly of SMD10 Devices This application note provides details of thermal characteristics and mounting considerations for the SMD10 surface mount package from International Rectifier. |
| 2003-06-30 | Protecting IGBTs and MOSFETs from ESD This application note discusses how to protect IGBTS and MOSFETs from ESD and how HEXFET users can implement and benefit from similar ESD control programs. |
| 2003-10-16 | New DIP-IPM for high-performance motor control Mitsubishi's new version of IPM series employs the latest 5G IGBT, not only achieved an improvement in the static and dynamic performance, but also extended the power capacity to up to 3.7kW. |
| 2004-05-28 | TD350 advanced IGBT driver principle of operation and applications TD350 advanced IGBT driver principle of operation and applications |
Most Popular Articles
Search EE Times India
Max's Cool Beans
Strange modes of transport and other "stuff"
Someone just pointed me at a YouTube video that claims to show the world's first e-powered multicopter flight...
