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| 2011-06-15 | NXP power transistors boost wireless base stations NXP reveals its Gen8 LDMOS RF power transistors that are optimised to deliver signal bandwidths of up to 60MHz targeted at wireless base stations. |
| 2011-05-27 | RF power MOSFETs withstand 200V peak voltage RF power MOSFETs withstand 200V peak voltage |
| 2011-03-31 | MEMS-over-CNT memory betters flash power consumption A non-volatile memory that combines an RF-capable metallic MEMS cantilever beam with a carbon nanotube transistor (CNT) claims to better flash on power consumption performance. |
| 2010-12-20 | DVB-T power amp with RF transistor DVB-T power amp with RF transistor |
| 2010-11-25 | Doherty power amp with LDMOS power transistor Doherty power amp with LDMOS power transistor |
| 2010-11-23 | RF power transistors tailored for aerospace applications RF power transistors tailored for aerospace applications |
| 2010-11-15 | GaN RF promises better performance than GaAs, Si power tech GaN RF promises better performance than GaAs, Si power tech |
| 2010-10-05 | RFMD ventures into GaAs foundry services RF Micro Devices Inc. expands its foundry services portfolio to provide a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers. |
| 2010-09-28 | UHF transistor aims at digital transmitter apps UHF transistor aims at digital transmitter apps |
| 2010-07-12 | RF transistors offer 2kV ESD protection RF transistors offer 2kV ESD protection |
| 2010-05-28 | Optimised RF transistors target TD-SCDMA network PAs Optimised RF transistors target TD-SCDMA network PAs |
| 2010-02-10 | IBM RF graphene transistor beats GaAs IC speed IBM RF graphene transistor beats GaAs IC speed |
| 2009-08-31 | LDMOS RF power transistors speed development LDMOS RF power transistors speed development |
| 2009-08-28 | RF MOSFET delivers 300W power at 175MHz RF MOSFET delivers 300W power at 175MHz |
| 2009-07-10 | Clamping of RF devices in OMP packages Clamping of RF devices in OMP packages |
| 2009-01-30 | Basestation PAs tout high power efficiency The amplifiers are designed to deliver efficiency of greater than 40 per cent at an average power of 10W. |
| 2008-12-24 | Power transistor targets DME applications Power transistor targets DME applications |
| 2008-11-27 | RF transistors for broadband apps debut RF transistors for broadband apps debut |
| 2008-06-05 | Power transistor target L-Band radar apps Power transistor target L-Band radar apps |
| 2008-05-05 | FET RF PA target radar, avionics apps FET RF PA target radar, avionics apps |
| 2007-07-05 | RF power transistors address Doherty challenges RF power transistors address Doherty challenges |
| 2007-06-06 | Power transistor delivers 1kW at 130MHz Power transistor delivers 1kW at 130MHz |
| 2006-10-10 | Nitronex RF power transistors target WiMAX market Nitronex RF power transistors target WiMAX market |
| 2006-08-02 | Sirenza releases SOF 26-packaged LDMOS transistor Sirenza releases SOF 26-packaged LDMOS transistor |
| 2006-07-13 | GaN RF power transistor targets mobile WiMAX apps GaN RF power transistor targets mobile WiMAX apps |
| 2006-06-22 | Infineon introduces LDMOS tech for WiMax Infineon Technologies AG's LDMOS tech will yield transistors that operate up to 3.8GHz, which is within the WiMAX and IEEE 802.16 wireless access frequency bands. |
| 2006-06-20 | LDMOS WiMAX solution promises 3.8GHz of performance Royal Philips Electronics has announced its next-gen LDMOS WiMAX line-up for base station solutions, which promises to deliver up to 3.8GHz over the 802.16e mobile WiMAX platform. |
| 2006-06-15 | Infineon introduces next-gen LDMOS to support WIMAX, 802.16 bands Infineon Technologies AG has introduced its next-gen LDMOS tech which will yield transistors that operate up to 3.8GHz, which is within the WiMAX and IEEE 802.16 wireless access frequency bands. |
| 2006-02-20 | RFIC and system-design simulators link Xpedion Design System Inc. has announced an interface to Simulink from The MathWorks to couple system-level and transistor-level simulation for RF design. |
| 2001-04-02 | Mounting consideration for SOT409 (Ceramic SO-8) devices This application note discusses the mounting considerations of Philips Semiconductors' SOT409B-packaged series of RF transistors (BLV904, BLV909 and BLV2042). |
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