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2012-02-29 Imec teams up with HiSilicon
Imec and HiSilicon will develop RF transceiver architectures using 28nm CMOS technology.
2011-06-15 NXP power transistors boost wireless base stations
NXP power transistors boost wireless base stations
2010-11-23 RF power transistors tailored for aerospace applications
RF power transistors tailored for aerospace applications
2010-07-12 RF transistors offer 2kV ESD protection
RF transistors offer 2kV ESD protection
2010-05-28 Optimised RF transistors target TD-SCDMA network PAs
Optimised RF transistors target TD-SCDMA network PAs
2010-03-29 RF power transistors: comparative study of LDMOS vs. bipolar technology
RF power transistors: comparative study of LDMOS vs. bipolar technology
2010-02-10 IBM RF graphene transistor beats GaAs IC speed
IBM RF graphene transistor beats GaAs IC speed
2009-08-31 LDMOS RF power transistors speed development
LDMOS RF power transistors speed development
2009-07-10 Clamping of RF devices in OMP packages
Clamping of RF devices in OMP packages
2009-06-01 Solder reflow attach method for RF devices
Solder reflow attach method for RF devices
2009-03-16 RFICs target demanding broadband networks
The RFICs are designed to enable multi-carrier amplifiers in base station transceivers to process more channels than ever before.
2008-11-27 RF transistors for broadband apps debut
RF transistors for broadband apps debut
2008-05-05 FET RF PA target radar, avionics apps
FET RF PA target radar, avionics apps
2008-04-07 RF power transistors targets WiMAX apps
RF power transistors targets WiMAX apps
2007-10-19 RF power transistors for broadcast, ISM market debut
RF power transistors for broadcast, ISM market debut
2007-07-05 RF power transistors address Doherty challenges
RF power transistors address Doherty challenges
2006-10-10 Nitronex RF power transistors target WiMAX market
Nitronex RF power transistors target WiMAX market
2006-06-22 Freescale expands into ISM market
Freescale Semiconductor is expanding into the industrial, scientific and medical (ISM) market with transistors designed for HF/VHF frequencies and the 2.45GHz ISM band.
2006-06-22 Infineon introduces LDMOS tech for WiMax
Infineon Technologies AG's LDMOS tech will yield transistors that operate up to 3.8GHz, which is within the WiMAX and IEEE 802.16 wireless access frequency bands.
2006-06-15 Freescale Semi expands into ISM market
Freescale Semi has announced that it is expanding into the ISM market with transistors designed for HF/VHF frequencies and the 2.45GHz ISM band.
2006-06-15 Infineon introduces next-gen LDMOS to support WIMAX, 802.16 bands
Infineon Technologies AG has introduced its next-gen LDMOS tech which will yield transistors that operate up to 3.8GHz, which is within the WiMAX and IEEE 802.16 wireless access frequency bands.
2001-04-02 Mounting consideration for SOT409 (Ceramic SO-8) devices
This application note discusses the mounting considerations of Philips Semiconductors' SOT409B-packaged series of RF transistors (BLV904, BLV909 and BLV2042).
2005-09-08 Infineon sells RF transistor line to Peak Devices
Infineon sells RF transistor line to Peak Devices
2005-11-15 M/A-COM expands power transistor and power module line-up
M/A-COM announced an extension of their bipolar power transistors and power module families, designed specifically for avionics and pulsed radar products and apps.
2001-04-03 Broadband impedance matching for s-band transistors
Broadband impedance matching for s-band transistors
2002-11-08 CDMA Cellular VCO with the BFG425W, BFG410W and Varactor BB142
This application note contains an example of a Voltage Controlled Oscillator for cellular CDMA Applications with the fifth generation BFG425W and BFG410W Double Poly RF-transistors.
2002-12-06 A wideband linear power amplifier (1.6-28 MHz) for 300W PEP with 2 MOS transistors BLF177
A wideband linear power amplifier (1.6-28 MHz) for 300W PEP with 2 MOS transistors BLF177
2002-12-11 Low Cost DECT Power Amplifier PH97005
This application note describes the application of two RF transistors in the design of a two-stage power amplifer, designed for use in DECT cordless telephone systems.
2002-12-19 Low cost DECT Power Amplifier PH9 7005
This application note describes the use of two of the 5th-generation silicon bipolar RF transistors in SOT3 43R plastic SMD package in a two-stage PH9 7005 power amplifier designed for use in DECT cordless telephone systems.
2002-12-20 Ultra low noise amplifier for 900 and 2000 MHz with high IP3
This application note describes four LNA designs with the BFG410W and BFG425W transistors
Max's Cool Beans

Clive Maxfield Strange modes of transport and other "stuff"

Someone just pointed me at a YouTube video that claims to show the world's first e-powered multicopter flight...

 

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