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| 2010-12-14 | MOSFET chipsets minimise switching losses IR rolls out the IRF6708S2 and IRF6728M 30V DirectFET MOSFET chipsets that are small and medium can devices featuring low charge and on-state resistance RDS(on). |
| 2010-04-21 | MOSFETs combine low charge, low RDS(on) International Rectifier has developed the IRF6706S2PbF and IRF6798MPbF DirectFET MOSFET chipset that provides high efficiency for 12V input synchronous buck applications. |
| 2008-07-15 | DirectFET chipset has very low on-resistance DirectFET chipset has very low on-resistance |
| 2004-12-07 | DirectFET technology board mounting DirectFET technology board mounting |
| 2007-10-03 | Infineon, IR ink DirectFET licensing deal Infineon, IR ink DirectFET licensing deal |
| 2007-04-11 | MOSFET chipset features low package inductance International Rectifier has introduced a new DirectFET MOSFET chipset for high-current DC/DC converters used in notebook, high-end desktops and servers, and advanced telecom and datacom systems. |
| 2006-12-21 | IR develops 150V MOSFET for DC/DC converters International Rectifier (IR) has introduced a 150V DirectFET MOSFET for isolated DC/DC converters operating from a 36-75V universal telecommunications input and 48V fixed input systems. |
| 2006-11-07 | Power MOSFET promises 95 per cent efficiency International Rectifier has released a power MOSFET called the IRF6641TRPBF which is a 200V HEXFET that uses DirectFET package technology and promises an efficiency of up to 95 per cent. |
| 2006-08-04 | New DirectFET MOSFETs deliver improved thermal conductivity New DirectFET MOSFETs deliver improved thermal conductivity |
| 2006-03-07 | IR expands XPhase family of control ICs International Rectifier 's XPhase control ICs are designed to be used with its existing phase IC and companion DirectFET power MOSFETs. |
| 2005-12-14 | 3-phase PWM control IC integrates drivers IR has introduced a three-phase PWM control IC with integrated drivers for DC/DC converters. This device enables up to 40 per cent circuit size reduction when used with IR DirectFET MOSFETs. |
| 2005-10-25 | IR power MOSFET delivers 30% lower device conduction losses International Rectifier unveiled a 60V DirectFET power MOSFET featuring a maximum on-state resistance of 7 milliohms (VGS=10V), which enables up to 30 percent lower device conduction losses compared to competitive solutions. |
| 2003-04-16 | Package efficiency: A boost to power MOSFETs DirectFET technology has radically reduced package resistance and inductance, and facilitated a large reduction in the thermal resistance. |
| 2003-06-27 | DirectFET Technology DirectFET Technology |
| 2004-12-07 | DirectFET technology board mounting DirectFET technology board mounting |
| 2005-06-02 | Inspection application note This app note demonstrates the DirectFET technology, which facilitates dual-sided cooling of surface mounted power MOSFET devices |
| 2005-06-02 | Board mounting application note This app note demonstrates DirectFET, a surface mount semiconductor technology designed primarily for board-mounted power applications |
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