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| 2001-08-20 | Gate-drive considerations for IGBT efficiency This application note describes considerations that should be taken into account when designing a gate drive circuit for an IGBT, and gives some typical circuit suggestions. |
| 2001-08-20 | Calculation of junction temperature This application note presents systematic computational techniques in getting the junction temperature of transistors. |
| 2001-08-20 | IGBT ratings and characteristics This application note details the basic operation, device parameters, ratings and characteristics of IGBTs. |
| 2001-08-20 | An introduction to IGBTs This application note provides an introduction to IGBTs outlining the device structures, mode of operation, ratings and characteristics for optimal use. |
| 2001-08-20 | Heatsink issues for IGBT modules This application note details the critical factors that should be considered when using heatsinks for IGBT modules. |
| 2001-08-20 | Microwave mass movement car security sensor This application note discusses the DA5815 microwave mass movement (volumetric) sensor as a suitable solution for use in car security systems, such as alarm system. |
| 2001-08-20 | MA31750—Pipelining instructions on the MA31750 This application note discusses the pipelining of instructions that must be considered when analyzing the behavior of the MA31750 processor. |
| 2001-08-20 | Electrostatic handling precautions This application note suggests some electrostatic precautions that should be considered when handling IGBTs. |
| 2001-08-20 | MA31750—Use of NMA31750 samples This application note is intended for design engineers who are evaluating the N iteration of the MA31750 microprocessor. It defines the aspects of the current device operation and covers known problems with the N iteration parts. |
| 2001-08-20 | Gate triggering and gate characteristics This application note discusses proper gate triggering and gate characteristics of thyristors. It also suggests gate drive recommendations to prevent triggering problems of thyristors. |
| 2001-08-20 | Clamping of power semiconductors This application note discusses the recommended clamping force of power devices to give good thermal and electrical contact between the internal and external interfaces of the device. |
| 2001-08-21 | AC2001—77GHz Gunn oscillator module This application note describes the AC2001 Gunn effect oscillator for automotive radar applications. |
| 2001-08-21 | Turn-on performance of thyristors in parallel This application note discusses the turn-on and fully on-state characteristics of thyristors connected in parallel. |
| 2001-08-21 | Selection of SCRs for parallel operation This application note presents a simple method of selecting the appropriate SCRs for parallel operation by looking on the device data sheet, based on a number of simplifying assumptions. |
| 2001-08-21 | Improved gate drive for GTO series connections This application note discusses how to improve gate drive for gate turn-off thyristors (GTOs) connected in series. It deals with the problems associated with turn-off and turn-on conditions. |
| 2001-08-21 | Using avalanche diodes without sharing capacitors This application note describes the use of avalanche diodes without the use of static sharing resistors or dynamic sharing capacitors. |
| 2001-08-21 | Thyristor/Diode measurement with a multimeter This application note describes proper measurement of thyristor and diode parameters using a battery-operated multimeter. |
| 2001-08-21 | Use of the VTO, rT on-state characteristic model This application note describes how to make better approximations of the forward voltage drop curve of power semiconductors by using the VTO and rT on-state characteristic model. |
| 2001-08-21 | Case non-rupture current ratings This application note describes the case non-rupture current parameters of thyristors. |
| 2001-08-21 | Formulating technical enquiries This application note presents some guidelines on how to formulate technical inquiries for thyristors, rectifiers or heatsink assemblies. |
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