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| 2012-05-11 | 14GHz power amp targets satellite communication Mitsubishi Electric develops a prototype gallium nitride high-electron mobility transistor (GaN HEMT) amplifier with a 100W output power for Ku-band (14GHz) satellite communications. |
| 2010-10-08 | Fujitsu's GaN HEMT ups power amplifier performance Fujitsu's use of gallium nitride high electron mobility transistors in power amplifier claims high 1.3W output performance. |
| 2010-10-05 | RFMD ventures into GaAs foundry services RF Micro Devices Inc. expands its foundry services portfolio to provide a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers. |
| 2009-03-16 | Material may help usher in next-gen microelectronics Scientists pinpoint mechanism to increase magnetic response of ferromagnetic semiconductor under high pressure. |
| 2009-02-24 | Mobility tester manually measures electron mobility Mobility tester manually measures electron mobility |
| 2008-03-27 | Carbon transistors to outperform chip materials Transistors could outperform the fastest chip materials, including indium antimonide claims researchers at the University of Maryland. |
| 2007-12-18 | Korean scientists create world's fastest nano transistor A group of Korean scientists have claimed that they have succeeded in creating a 15nm high electron mobility transistor with a maximum frequency speed of 610GHz. |
| 2007-02-01 | Sematech, TEL collaborate on 3D interconnects Sematech and Tokyo Electron Ltd (TEL) have entered into a joint development programme to improve the use of 3D interconnect technology and high mobility channel materials in advanced manufacturing. |
| 2006-08-10 | High gain HEMT designed for low noise amps Mitsubishi Electric Corp. has developed a high gain version of a micro-X package HEMT, suitable for low noise amplifiers in 18-20GHz-band satellite broadcasting reception systems. |
| 2006-06-26 | RFMD samples GaN transistors to target cellular, WiMAX bands RFMD is sampling out a family of GaN HEMT high-power transistors for cellular infrastructure and WiMAX base stations. |
| 2006-06-22 | Cree samples 15W GaN HEMT for WiMAX Cree is sampling its latest 15W packaged GaN HEMT that is optimised for broadband wireless access and WiMAX applications. |
| 2006-06-15 | Cree samples GaN HEMT to target wireless apps Cree Inc. has announced the sampling of its 15W packaged GaN HEMT that is optimised for broadband wireless access and WiMAX applications. |
| 2005-10-18 | Oki Electric develops GaN-HEMT Oki Electric Industry Co., Ltd disclosed the development of Gallium Nitrate High Electron Mobility Transistor (GaN-HEMT), a power transistor with improved amplifying characteristics, at the 208th Meeting of the Electrochemical Society |
| 2005-11-03 | Driver amp spans 11 to 20GHz Mimix Broadband introduced a GaAs three stage driver amplifier with a self-biased, single supply design |
| 2001-08-09 | Some new technologies in future mobile terminal This conference technical paper summarizes new ideas, technologies and trends of wireless terminals, such as RF semiconductor, data transmission and image capture area, which can be used in future mobile terminals (phones). |
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