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| 2011-06-14 | Field effect transistor characterisation Field effect transistor characterisation |
| 2011-02-01 | Transistor meets plastic electronics requirements Transistor meets plastic electronics requirements |
| 2010-12-08 | Intel reports progress on QWFETs Intel Corp. says it has made progress in the area of quantum well field effect transistors (QWFETs) at a paper presentation at the International Electron Device Meeting (IEDM). |
| 2009-09-29 | Increase equipment efficiency with app-specific IGBTs (Part 1) The IGBT, also known as the conductivity-modulated field-effect transistor, is one of the most commonly available advanced switching power devices in the market today. |
| 2008-12-23 | IBM develops fastest graphene transistor IBM develops fastest graphene transistor |
| 2008-08-18 | Explaining redundant power techniques for servers Problems with redundant power in server applications can be addressed with field effect transistor ORing controllers. |
| 2007-02-21 | Back to the basics of power MOSFETs This article provides the basics on power MOSFETs. It compares the MOSFET to the bipolar transistor and discusses some tradeoffs. |
| 2008-05-05 | FET RF PA target radar, avionics apps Newcomer HVVi Semiconductors has introduced the high-voltage vertical field effect transistor (HVVFET), a family of silicon power transistors targeted at L-band avionics and pulsed-radar applications. |
| 2007-02-21 | Back to the basics of power MOSFETs This article provides the basics on power MOSFETs. It compares the MOSFET to the bipolar transistor and discusses some tradeoffs. |
| 2007-05-08 | Redundant power techniques for servers explained This article takes a look at several techniques that are used to support high availability systems. Find out which redundant power technique works best. |
| 2007-09-19 | Power MOSFET drivers provide automotive lighting protection and control Using relays and fuses to switch and limit current for power delivery can be unpredictable and unreliable. Combining a high-side pre-FET driver and power FET is an optimal solution to control vehicle lighting. |
| 2006-05-17 | NJR announces JFET op amp New Japan Radio Co. Ltd has announced a single junction field-effect transistor (JFET) input operational amplifier. |
| 2005-08-22 | Constructing the next transistor Constructing the next transistor |
| 2005-09-14 | Toshiba touts power output of GaN-based FET Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications. |
| 2005-09-15 | FET surpasses GaAs FETs Toshiba has announced development of a GaN power FET that is touted to surpass the operating performance of the GaAs FET widely used in base stations for terrestrial and satellite microwave communications |
| 2005-11-02 | Infineon MOSFETs offer 'exceptionally' low on-state resistance Infineon Technologies AG unveiled its CoolMOS CP series of MOSFETs designed for high-efficiency power supplies. |
| 2002-06-20 | Mass production technology of large size III-V compound semiconductor expitaxial wafers for microwave devices by MOVPE This application note describes the mass production techniques for large diameter MOVPE wafers for microwave devices. |
| 2002-09-01 | Protection IC ensures battery reliability Specific IC with protection loop guarantees defense against overcharging, overdischarging, and overcurrent problems of lithium batteries. |
| 2002-09-01 | Enhancing power circuit design This technical article demonstrates how discrete design information can be used to enhance the design of power circuits for computers and handheld devices. |
| 2003-09-19 | IC Op Amps Beats FETs on Input Current This application note discusses using an IC operational amplifier instead of a FET, when an input error current in the order of 100pA over the -55°C to 125°C temperature range is required. |
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