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| 2011-02-01 | Transistor meets plastic electronics requirements Georgia Tech researchers have developed a top-gate organic field-effect transistor with a bilayer gate insulator that claims excellent stability and performance for use on plastic electronics. |
| 2011-01-25 | Samsung rolls out 20nm low-power process Samsung Electronics Co. Ltd announces its first 20nm process rollout using gate-last technology that is reportedly geared for logic and foundry applications. |
| 2009-01-16 | Logic level VGS ratings for power MOSFETs Know the link between the absolute maximum rating of gate-source voltage for a logic level power MOSFET and its reliability. |
| 2007-11-22 | NEC unveils 40nm logic process NEC Electronics has rolled out a 40nm logic process that uses a one-two punch: hafnium-based high-k dielectric materials and nickel-silicide gate electrodes as well as zirconium-oxide DRAM capacitors. |
| 2001-08-23 | Technical comparison of floating-gate reprogrammable non-volatile memories Technical comparison of floating-gate reprogrammable non-volatile memories |
| 2005-06-01 | Leakage power at 90nm and below Learn more about the challenges and tools needed in addressing leakage power at 90nm and below in today's advanced designs |
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