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| 2011-04-06 | Power MOSFETs tout lowest on-resistance Vishay Intertechnology reveals two 40V and 60V N-channel TrenchFET power MOSFETs in SO-8 or PowerPAK SO-8 packages touting the industry's lowest on-resistance ratings. |
| 2011-03-07 | Compact MOSFETs optimised for handheld devices Vishay Intertechnology Inc. unveils a 30V n-channel and 20V p-channel TrenchFET power MOSFETs in the thermally enhanced Thin PowerPAK SC-70 package with an ultra-low 0.6mm profile. |
| 2011-01-21 | Power MOSFET touts lowest on-resistance Vishay Intertechnology debuts an 8V TrenchFET power MOSFET, the SiA427DJ in a thermally enhanced PowerPAK SC-70 package claiming the lowest p-channel device on-resistance. |
| 2010-05-17 | 30V p-channel MOSFET offers on-resistance of 7mΩ at 10V Vishay Intertechnology Inc. debuts a 30V p-channel TrenchFET Gen III power MOSFET whose lower on-resistance translates into lower power consumption, saving power and prolonging battery life between charges. |
| 2010-01-05 | 12V p-channel MOSFET boasts lowest on-resistance The device is built on TrenchFET Gen III p-channel technology and comes in a thermally enhanced PowerPAK SC-75, which features a footprint of 1.6mm by 1.6mm. |
| 2009-05-13 | Tiny MOSFET boasts low on-resistance The Si7615DN offers an on-resistance of 3.9 mΩ at 10 V, 5.5 mΩ at 4.5 V, and 9.8 mΩ at 2.5 V. |
| 2008-08-25 | Power MOSFETs offer low on-resistance Vishay Intertechnology Inc. has released a family of p-channel power MOSFETs in the PowerPAK SC-75. |
| 2006-01-27 | DC/DC converters simplify design process Vishay Intertechnology Inc. has released two high-speed converter solutions that integrate the control MOSFET, the synchronous MOSFET, and driver circuit in a PowerPAK MLF 10mm-by-10mm package. |
| 2005-12-05 | Power MOSFETs offer low on-resistance values The 17 new power MOSFETs from Vishay are housed in the PowerPAK 12128 package and are offer on-resistance values down to 3.7 mΩ. |
| 2001-07-03 | Thermal Performance Of Power MOSFET Packages This paper introduces the PowerPAK family of power MOSFET packages, which provide increased levels of performance for a given footprint and profile. |
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