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EE Times India - total search 269 articles sort by date sort by relevance
Horizontal Deflection for 17-inch, 70kHz monitors using Philips CU15/35 drive transformer and BU4522AF/AX transistor 2002-11-13
This application note presents a circuit that uses the CU15/35 drive transformer and the BU4522AF/AX deflection transistor for the horizontal deflection of 17-inch, 70kHz PC monitors  
Broadband DVB-T UHF power amp with transistor 2010-12-01
Learn about the design and performance of a DVB-T UHF power amplifier using the BLF888 UHF LDMOS power transistor  
DVB-T power amp with RF transistor 2010-12-20
Know the design and performance of a 50 W DVB-T power amplifier for the 174 MHz to 230 MHz VHF band using the BLF881 power transistor  
Horizontal Deflection for 17-inch, 64kHz monitors using Philips CU15/35 drive transformer and BU4522AF/AX transistor 2002-11-13
This application note presents a circuit that uses the CU15/35 drive transformer and the BU4522AF/AX deflection transistor for the horizontal deflection of 17-inch, 64kHz PC monitors  
AlGaN/GaN transistor application notes: Surface morphology 2001-10-09
This application note describes the typical surface morphology of RF Nitro's AlGaN/GaN transistor structures grown on SiC or sapphire  
AlGaN/GaN transistor application notes: Insulating GaN buffer layers 2001-10-08
This application note explains RF Nitro's technique in insulating GaN films that is required for high-performance transistor applications  
NEC SiGE transistor suits wireless LAN, cordless telephones 2003-07-17
NEC Compound Semiconductor Devices Ltd and NEC Electronics GmbH have released a silicon germanium (SiGe) bipolar transistor called NESG3031 that was developed with the company's SiGe Heterojunction Bipolar Transistor semiconductor process technology (UHS3 process  
A low noise amplifier with high IP3 for the 900MHz band using the MRF1057T1 low noise transistor 2004-12-14
This app note discusses a low noise amplifier with high IP3 for the 900MHz band using the MRF1057T1 low noise transistor  
A cascade 2 stage low noise amplifier using the MRF1047T1 low noise transistor 2004-12-14
This app note describes the performance of a cascade LNA circuit using the Motorola MRF1047T1 low noise bipolar transistor  
Designing a 2-transistor forward converter using a CoreMaster E2000Q core 2001-09-07
This application note describes how to design a typical two-transistor, forward converter using Coremaster's E2000Q magnetic core  
1930 MHz to 1990 MHz Doherty amp with transistor 2011-01-27
Learn about Doherty power amplifier for base stations in the 1930 MHz to 1990 MHz band using the BLF7G20LS-200 LDMOS transistor  
Gate driver design for switch-mode applications and the DE-Series MOSFET transistor 2001-09-06
Gate driver design for switch-mode applications and the DE-Series MOSFET transistor  
Doherty power amp with LDMOS power transistor 2010-11-25
Know about RF performance tests for a Doherty power amplifier design using the BLF7G27LS-150P LDMOS power transistor  
BLV859 UHF linear push-pull power transistor 2001-04-02
This application note presents a broadband linear amplifier design, which is based on two BLV859 bipolar transistors combined with quadrature hybrids, suitable for application in TV transposers operating in band IV and V (470MHz to 860MHz).  
Understanding power transistor breakdown parameters 2000-12-07
This application note gives a definition of the breakdown parameters and the associated physics of semiconductor devices.  
Fast IC Power Transistor with Thermal Protection 2003-05-11
Overload protection is perhaps most necessary in power  
AlGaN/GaN transistor application notes: Summary of physical parameters 2001-10-09
This application note shows a tabular summary of the physical parameters of AlGaN/GaN semiconductor crystals.  
AlGaN/GaN transistor application notes: Substrate selection 2001-10-09
This application note describes the available substrate materials that can be used for GaN epitaxial growth. Features and characteristics of substrate types are given importance to guide users for right material selection.  
Field effect transistor characterisation 2011-06-14
An source/measure units (SMU) combines the capabilities of a current source, a voltage source, a current meter and a voltage meter.  
Speeding up horizontal outputs 2000-12-13
This application note presents a base drive circuit that employs a backwards design, i.e., start with the output transistor's device physics and work back to the horizontal oscillator, in order to speed up the horizontal output stage of a transistor  
9W linear class-AB amplifier with the BLV909 for 935MHz to 960MHz 2001-04-02
This application note contains information on a 9W class-AB amplifier, which is based on the SMD transistor BLV909, suitable for driver stages in cellular radio base stations in GSM band (935MHz to 960MHz  
Broadband impedance matching for s-band transistors 2001-04-03
This application note describes a method of designing an input and output matching circuit for a broadband power transistor operating in the low S-band (2.7GHz to 3.1GHz) frequency range  
Motorola's D2 series transistors for fluorescent converters 2000-12-06
This application note presents the interest of the D2 transistor series structure and how to utilize this series to solve the critical issues that the designer must deal with  
5W class-AB amplifier with the BLV904 for 935MHz to 960MHz 2001-04-02
This application note contains information on a 5W class-AB amplifier, which is based on the SMD transistor BLV904, suitable for driver stages in cellular radio base stations in the GSM band (935MHz to 960MHz  
A linear broadband 12W amplifier for band IV/V TV transposers based on the BLV58 2001-04-03
This application note presents a broadband linear amplifier design, which is based on a single BLV58 bipolar transistor in push pull configuration, suitable for application in TV transposers operating in bands IV and V (470MHz to 860MHz  
BLF578 352MHz 1 kW demo board 2011-07-15
Find out how to achieve Full 1 kW CW output power and an efficiency of 70 % with a BLF578 VHF power LDMOS transistor at 352MHz  
4W linear class-AB amplifier with the BLV2042 for 1930MHz to 1990MHz 2001-04-02
This application note contains information on a 4W class-AB amplifier, which is based on the SMD transistor BLV2042, suitable for driver stages in cellular radio base stations in the PCS band (1.93GHz to 1.99GHz  
Input to output isolation for TPS61170 2011-04-08
Know how to use a PMOS transistor to disconnect the boost converter's input voltage from the output voltage when the device is disabled  
A broadband 100W push-pull amplifier for band IV & V TV transmitters based on the BLV861 2001-04-03
This application note describes a broadband high power amplifier design with a single BLV861 transistor intended for applications in TV transmitter output stages  
2GHz buffer amplifier with the BFG410W 2001-04-03
This application note presents an example of a 2GHz buffer amplifier using Philips Semiconductors' BFG410W double poly-silicon wideband transistor  


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