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Topic: Fundamentals of Bias Temperature Instability and State of the Art Measurement Methods
Sponsor: Keithley
Time: 2011-03-29 , 2011-03-29
Introduction: This seminar is designed to help reliability engineers understand and implement state-of-the-art Bias Temperature Instability (BTI) measurements using Ultra-Fast I-V methods. The first segment of the seminar examines the current theory of positive and negative BTI (PBTI and NBTI) mechanisms in ultra thin film transistors. The second segment addresses the measurement challenges and defines the best methods for Ultra-Fast I-V measurements for capturing both degradation and recovery characteristics. Those participating in this seminar will learn:  • The current theories behind modeling NBTI and PBTI  • Challenges associated with characterizing BTI degradation and recovery  • State-of-the-art measurement techniques for modeling and process control  • Limitations in Ultra-Fast I-V including Johnson Noise and others  • Tips on characterizing measurement system performance
Target Audience: This seminar is intended for those whose job requires performing semiconductor reliability characterization measurements. The material is particularly beneficial for students, technicians, engineers, and lab managers who are responsible for developing test systems and methodologies to address the need of ultra thin film transistor reliability.

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