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Power/Alternative Energy  

RF power transistors: comparative study of LDMOS vs. bipolar technology

Posted: 29 Mar 2010  Print Version  Bookmark and Share Subscribe

Keywords: power transistors  LDMOS vs. bipolar  RF power transistors 

[Summary of tips] RF power transistors consist of two type of devices: bipolar junction (BJT) and field effect (FET). Due to differences in technology, the bipolar junction transistor yields superior performance for certain applications, while the field effect transistor is better employed for others. This application note discusses and compares......
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