Researchers devise technique to speed up MRAM
Keywords: MRAM electrical switching perpendicular recording
[Summary of tips] MRAM speed can be increased and power consumption reduced by an electrical switching technique that needs less energy to write bits, according to researchers at Tsinghua University in Beijing, China. When an electrical signal was applied to the MRAM bit cells, it affected the magnetic polarisation of the bit cell by scattering ......|
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