NXP Semiconductors has a new line of automotive power MOSFETs that boasts an 80% smaller footprint than competitive solutions and is optimised for automotive applications. Housed in a compact, thermally enhanced Loss Free PAcKage (LFPAK), the LFPAK33 is optimized for high-density automotive applications.

NXP said the package was created in response to growing industry pressure to reduce the size of modules in the car while continuing to improve energy efficiency and reliability.

The package measures just 10.9mm² and, without wires or glue, delivers a thermal performance of 175°C Tj max.

The product uses a copper clip design to reduce the package resistance—delivering up to 70A max rating—and inductance, which in turn reduces the RDS(ON) and switching losses of the MOSFET.

So, how come no wires, no glue? What's special about the LFPAK is that the silicon die is soldered to the drain tab forming the electrical drain connection. Then the top-clip is soldered to the silicon die to provide source and gate connections, eliminating bond wires and reducing package resistance and inductance. The drain tab is soldered directly to the PCB to provide a low electrical resistance path and also low thermal resistance between the MOSFET and the PCB (see figure below).


LFPAK33 construction Figure 1: The package measures 10.9mm² and, without wires or glue, delivers a thermal performance of 175°C Tj max. Source: NXP Semiconductors.

  In a press announcement, NXP's Richard Ogden, product marketing manager, said, "As more subsystems are crammed into the connected vehicle, the need for rugged, compact power systems are becoming ever greater." The LFPAK33 sets the benchmark for automotive MOSFET performance in a compact package, according to Ogden.

NXP's MOSFET range in this package covers 30V to 100V at as low as 6.3mΩ. The products are shipping now.