STMicroelectronics has released MDmesh DK5 power MOSFETs that are said to be Very High-Voltage (VHV) super-junction transistors with a fast-recovery diode. The company says this helps designers maximise the efficiency of various power-conversion topologies including LLC resonant converters with Zero-Voltage Switching (ZVS).

The devices have voltage ratings from 950 V to 1050 V and deliver switching performances with lower on-resistance (RDS(ON)) and higher current rating per die area compared to ordinary planar MOSFETs, STMicroelectronics said. They enable designers to enhance efficiency as well as increase power density by using fewer parallel components in converters for high-power equipment such as telecom and data centre servers powered from high bus voltages, industrial welders, plasma generators, high-frequency induction heaters, and X-ray machines, the company noted.

With the fast-recovery body diode, the new devices enable higher efficiency in ZVS LLC resonant converters, which are chosen for applications that require high efficiency over a wide input-voltage range. Other types of bridged converters, as well as boost DC/DC converters for battery charging, also benefit from the reduced losses and enhanced dynamic performance of these devices. According to STMicroelectronics, compared with currently available VHV fast-diode MOSFETs, the DK5 devices combine the best reverse-recovery time (trr) and lowest MOSFET gate charge (Qg) and RDS(ON), with the favourable output and input capacitances (Coss, Ciss) of a super-junction device.

The DK5 family extends ST’s VHV super-junction portfolio, which includes devices from 800 V to 1500 V, adding six new parts in TO-247, TO-247 Long-Lead, Max247, and ISOTOP power packages. Volume production has already started for the STWA40N95DK5, STY50N105DK5, and STW40N95DK5, with prices starting from ₹572.45 ($8.85) for orders of 1000 pieces.