100V, 35A MOSFETs target high-throughput satellites

Article By : Infineon Technologies AG

The MOSFETs have been characterised for useful performance with linear energy transfer up to 90MeV/(mg/cm²).

Developed by Infineon IR HiRel, the IRHNJ9A7130 and IRHNJ9A3130, which are radiation hardened MOSFETs based on the proprietary N-channel R9 technology platform, are fully characterised for TID (total ionising dose) immunity to radiation of 100kRads and 300kRads, respectively. An RDS(on) of 25mΩ (typical) is 33% lower than the previous device generation. In combination with increased drain current capability (35A vs. 22A), this allows the MOSFETs to provide increased power density and reduced power losses in switching applications.

The MOSFETs have improved Single Event Effect (SEE) immunity and have been characterised for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm²)—at least 10% higher than previous generations.

Due to its size, weight and power improvements, it is significant in systems such as high-throughput satellites, where the cost-per-bit-ratio can be significantly reduced. The 100V, 35A MOSFETs are ideally suited to mission-critical applications requiring an operating life up to and beyond 15 years. Target applications include space-grade DC-DC converters, intermediate bus converters, motor controllers and other high speed switching designs.

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