Despite several developments in SiC power diodes and MOSFETS, the optimization of such devices for electrical conductivity remains a major challenge.
Infineon has signed a new multi-year-supply and cooperation agreement with Resonac on SiC material supply.
onsemi will showcase three new members of its EliteSiC silicon carbide (SiC) family at the Consumer Electronics Show (CES) 2023 in Las Vegas.
EPC has strengthened its leadership in GaN technology by adding significant 8-inch manufacturing capacities in collaboration with VIS.
The goal of the cooperation is the adoption by ST of Soitec's SmartSiC technology for its future 200mm substrate manufacturing.
Methods based on machine learning can be used to achieve and optimize the design of GaN-based subwavelength grating (SWG).
The partnership agreement sees Jaguar Land Rover participate in the Wolfspeed Assurance of Supply Program, to secure the supply of this technology for future EV production needs.
EPC has expanded its selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 150V EPC2308.
SemiQ has expanded its portfolio of silicon carbide (SiC) power devices with the release of a second-generation SiC power switch, a 1.2kV 40mΩ SiC MOSFET.