2021-03-25 - Steve Taranovich

An In-depth Look at GaN Technology

There are only a handful of GaN books out there that will truly benefit readers in both the design engineering and executive management communities.

2021-03-02 - Maurizio Di Paolo Emilio

Ultra-Low Power Chipsets for NB-IoT Networks

Sony Semiconductor highlighted the importance of providing ultra-low power chipsets to keep devices connected to today’s LTE networks and ready for 5G IoT...

2021-02-25 - Maurizio Di Paolo Emilio

GaN ToF Laser Drivers Power the Next-Gen LiDAR

EPC's new lidars integrate the device driver directly with the GaN laser. This configuration…

2021-01-08 - Maurizio Di Paolo Emilio

GaN FETs Enable EVs & Industrial Power Designs

The company claims its next generation of 600-V and 650-V GaN FETs for automotive and other industrial applications achieve 99% efficiency.

2020-11-25 - Maurizio Di Paolo Emilio

Why Test & Measurement Matter to Wide Bandgap Semiconductors?

Keysight's Alan Wadsworth and Mike Hawes review the critical aspects of Test and Measurement for analyzing wide-bandgap solutions.

2020-11-17 - Maurizio Di Paolo Emilio

Testing of GaN to Ensure the Quality and Reliability for Power Systems

GaN transistors can offer superior performance — but what about quality…

2020-11-06 - Brian Santo

2020 Double Summits Open with Global CEO Summit and WEAA

On Semi CEO Keith Jackson was bestowed with this year’s Lifetime Achievement Award at the 2020 Double Summits. The Executive of the Year alward went to Vincent Roche, CEO of ADI…

2020-11-05 - Maurizio Di Paolo Emilio

Bringing GaN-based Power Devices to Market

ST presented MasterGaN, a platform that integrates a half-bridge driver based on silicon technology with a pair of gallium nitride power transistors. STMicroelectronics, in an interview with EE Times, highlighted how this new platform enables systems to be up to 80% smaller by offering lighter weight and 3 times faster recharge times. But above all

2020-10-30 - Maurizio Di Paolo Emilio

Minimizing Electrolytic Capacitor Size with Tiny ICs

Power Integrations has announced its latest MinE-CAP solution for high power density AC-DC converters with universal input. MinE-CAP technology reduces the size of high-voltage electrolytic capacitors (bulk capacitors), also reducing the overall size of the adapter by up to 40%. The MinE-CAP device also drastically reduces the inrush current, making NTC thermistors unnecessary, thus increasing...

2020-09-02 - Maurizio Di Paolo Emilio

GaN HEMTs Promising Future for Next-Gen Power Semiconductor

GaN HEMTs feature low operating resistance and a high breakdown voltage, which makes them promising as a next-generation power semiconductor.