CEA-Leti to Discuss Latest Integration, Packaging Gains for Next-gen LiDAR Steering on AVs at ECTC

Article By : CEA-Leti

CEA-Leti will present new integration and packaging technologies for next-generation LiDAR optical-network driving devices in autonomous vehicles at ECTC.

CEA-Leti will present new integration and packaging technologies for next-generation LiDAR optical-network driving devices in autonomous vehicles at the Electronic Components and Technology Conference, happening May 30-June 2, in Orlando, Florida.

Presented in the paper, “Advanced 3D Integration TSV and Flip Chip Technologies Evaluation for the Packaging of a Mobile LiDAR 256-Channel Beam Steering Device Designed for Autonomous Driving Application”, the system was developed with the institute’s 3D microelectronics platform. Its 10µm-diameter mid-process through-silicon vias (TSVs) significantly improve interconnect density by distributing them on the whole backside surface of the devices. Combining 40µm fine-pitch, lead-free solder flip chip on a silicon interposer, this collective integration increases the performance and compactness of LiDARs, while lowering their cost for use in autonomous vehicles (AV).

LiDAR sensors are considered to  be a strong technology for ensuring safe AV driving because they can detect obstacles in the vehicle’s path and calculate their distance away. First-generation LiDARs were based on a mechanically generated steering beam and were much too large to be fully integrated in a vehicle. In this research work, steering concepts were developed using wafer-level silicon technology, including optical phase arrays. A 1,550nm wavelength beam was then brought into the circuit through grating couplers, then guided through silicon-oxide waveguides to the steering area. This provides precise, latency-free information on the position and speed of obstacles surrounding road transport vehicles, independently of light conditions and with sharp angular resolutions.

Along with other CEA-Leti presentations at ECTC, the paper illustrates the institute’s 3D interconnection expertise, primarily on its semiconductor wafer-level platform. System-in-package and 3D integration schemes enable mixing different technologies and/or substrate materials to address not only high-performance computing (HPC) applications requiring high-density interconnections, but also cost-sensitive applications, e.g. edge artificial intelligence and the Internet of Things (IoT).

“Our goals are to offer high-level of integration through high-density, fine-pitch interconnections to serve different requirements for a wide variety of applications,” said Sylvie Joly, partnerships manager for 3D integration & packaging at CEA-Leti. “Our labs’ wide range of advanced technologies complement each other; for example, hybrid-bonding such as die-to-wafer and wafer-to-wafer high interconnection density is closely linked to TSVs, to keep the density for further layer or ball grid array (BGA) connections.”

Additional papers

Other papers to be presented include:

Demonstration of a Wafer Level Face-to-Back (F2B) Fine Pitch Cu-Cu Hybrid Bonding with High Density TSV for 3D Integration Applications (Session 3, paper 4, Wednesday, May 31 @ 11:15 AM)

Process Integration of Photonic Interposer for Chiplet-Based 3D Systems (Session 1, paper 2, Wednesday, May 31 @ 9:50 AM)

Integration and Process Challenges of Self-Assembly Applied to Die-to-Wafer Hybrid Bonding (Session 34, paper 3, Friday June 2 @ 2:40 PM)

3D Silicon Interposer for Terabit/s Transceivers Based on High-Speed TSVs (Session 33, paper 1, Friday June 2 @ 2:00 PM)

“Characterizations of Indium Interconnects for 3D Quantum Assemblies (Session 23, paper 7, Thursday June 1 @ 4:45 PM)

Recent Progress in the Development of High-Density TSV for 3-Layer CMOS Image Sensors (Session 28, paper 4, Friday June @ 11:15 AM)

CEA-Leti’s Stéphane Bernabé will co-chair the special session on Photonics Packaging, May 30 at 1:30 – 3:00 p.m. In addition, institute experts will be onsite at Booth 234 and available to discuss the findings in the presentations.


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