The benefits of wide-bandgap silicon carbide (SiC) semiconductors arise from their higher breakthrough electric field, larger thermal conductivity, higher electron-saturation velocity and lower intrinsic carrier concentration compared to silicon (Si). SiC MOSFETs are becoming an attractive switching transistor for high-power applications. This application note describes the CoolSiC™MOSFET’s general features and applications, which can help in designing power systems effectively using the novel transistor.