GaN-HEMT offers 74% drain efficiency for 2.6GHz base stations

Article By : Julien Happich

The high efficiency will result in simpler cooling system, which reduces BTS size and power consumption.

Mitsubishi Electric has introduced a 220W-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT), which offers a high drain efficiency of 74% for 2.6 GHz-band base transceiver stations of 4G mobile communication systems.

The high efficiency will result in simpler cooling system, which reduces BTS size and power consumption, notes the company.

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