GaN-HEMT offers 74% drain efficiency for 2.6GHz base stations
Article By : Julien Happich
The high efficiency will result in simpler cooling system, which reduces BTS size and power consumption.
Mitsubishi Electric has introduced a 220W-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT), which offers a high drain efficiency of 74% for 2.6 GHz-band base transceiver stations of 4G mobile communication systems.
The high efficiency will result in simpler cooling system, which reduces BTS size and power consumption, notes the company.
Sampling will start in November. Several part numbers are available to cater for the power needs of macro-cells and small cells.