GaN HEMTs Promising Future for Next-Gen Power Semiconductor

Article By : Maurizio Di Paolo Emilio

GaN HEMTs feature low operating resistance and a high breakdown voltage, which makes them promising as a next-generation power semiconductor.

Silicon power MOSFETs have not kept pace with the evolutionary changes in the power electronics industry, where factors such as efficiency, power density, and smaller form factors are the main demands of the community. Silicon MOSFETs have reached their theoretical...

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