The investments includes $400m strategic investments in the Agrate fab; and GaN and 200mm SiC wafer capacity.
Using silicon carbide gate drivers can reduce energy loss by 30 percent while maximizing system uptime.
Navitas’ next-generation gallium nitride (GaN) power ICs enable 3x faster charging and achieve mainstream adoption in mobile fast-chargers, addressing...
Some low-power IoT sensors will be combined with wireless RF, yet they must be cheap. That suggests combining silicon CMOS with III-V devices on the s...
Devices with GaN or SiC are gradually replacing their silicon-based counterparts.
Effective high-power, compact AC adapters can be built using SiC, GaN, and Si super junction devices, according to an analysis by TechInsights of thre...
The research institute has devised a gallium nitride (GaN) microLED that is simpler in construction than other LEDs commonly used in displays
Electrical power systems require the optimal combination of primary and secondary sources
STMicroelectronics, not among the “usual suspects” indulging in 5G chips, is nonetheless making its move into this nascent market.
ST to manufacture GaN-on-silicon wafers for Macom's use in RF applications.