CoolSiC™ 1200 V SiC MOSFET

2019-07-02 -

CoolSiC™ 1200 V SiC MOSFET

CoolSiC™ 1200 V SiC MOSFETThe benefits of wide-bandgap silicon carbide (SiC) semiconductors arise from their higher breakthrough electric field, larger thermal conductivity, higher electron-saturation velocity and lower intrinsic carrier concentration compared to silicon (Si). SiC MOSFETs are becoming an attractive switching transistor for high-power applications. This application note describes the CoolSiC™MOSFET’s general features and applications, […]