SiC schottky diodes realise higher power efficiency
Article By : Toshiba
The Toshiba’s SiC schottky barrier diodes deliver approximately 70% improved surge forward current than first generation products.
Toshiba’s Storage & Electronic Devices Solutions has recently introduced its second generation of 650V silicon carbide (SiC) Schottky barrier diodes (SBDs), which have improved surge forward current against other Toshiba products available.
This SiC schottky barrier diodes deliver approximately 70% improved surge forward current than first generation products, and at the same time reduce the switching loss index of “RON*Qc” by around 30%. Thus, are suitable for use in efficient power factor correction (PFC) schemes. It can also contribute to improving the efficiency of power supplies in devices including 4K large screen LCD TVs, projectors and multifunction copiers, and in industrial devices such as telecommunication base stations and PC servers.
These are available in four current ratings of 4A, 6A, 8A, and 10A, either in a non-isolated “TO-220-2L” package or an isolated “TO-220F-2L” package.