2020-09-02 - Maurizio Di Paolo Emilio

GaN HEMTs Promising Future for Next-Gen Power Semiconductor

GaN HEMTs feature low operating resistance and a high breakdown voltage, which makes them promising as a next-generation power semiconductor.

2020-04-09 - Maurizio Di Paolo Emilio

GaN-on-Diamond To Play A Role in Future Power Devices

Integrating GaN with other materials is a challenge, but several organizations are exploring ways to bond diamond and GaN to…