2020-09-02 - Maurizio Di Paolo Emilio
GaN HEMTs Promising Future for Next-Gen Power Semiconductor
GaN HEMTs feature low operating resistance and a high breakdown voltage, which makes them promising as a next-generation power semiconductor.
2020-04-09 - Maurizio Di Paolo Emilio
GaN-on-Diamond To Play A Role in Future Power Devices
Integrating GaN with other materials is a challenge, but several organizations are exploring ways to bond diamond and GaN to…