Scientists Develop New Artificial Nanostructures for IR Absorption Technologies
A new method to confine and absorb infrared (IR) light with GaN nanostructures can help develop highly efficient infrared absorbers, emitters,…
EPC Expands GaN Family with 150V Device for High-power Density Applications
EPC has expanded its selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 150V…
HG Semiconductor Enters Strategic Partnership with Golden Concord Group
The collaboration can give a full play to the advantages of both parties in the industry, supply chain, talent, and…
EPC Expands Family of Packaged GaN FETs
EPC's 100V, 3.8mΩ EPC2306 GaN FET offers higher performance and smaller solution size for high power density applications.
BRC Solar’s Power Optimizer Uses EPC eGaN FETs
EPC GaN FETs' low power dissipation enabled a higher current density for BRC Solar's next-gen power optimizer.
EPC’s Rad Hard GaN Transistor Offers Lowest On-Resistance Solution
EPC's EPC7018 is a radiation-hardened GaN FET that has the lowest on-resistance currently available on the market.
‘GaN Talk Support Forum’ Speeds Up Time to Market of GaN-based Power System Designs
EPC provides a forum for engineers to receive product support, ask questions, and share ideas on using GaN technology.
EPC 40V, 1.1mΩ GaN FET for Space-constrained Applications
EPC has expanded its selection of low-voltage, off-the-shelf GaN transistors with the introduction of the EPC2066 GaN FET.
Sensitron and EPC Collaborate on High-Power Density 350V GaN Half-Bridge IPM
Using EPC's EPC2050 GaN FET, Sensitron was able to reduce the size of its solution by 60% while also further…
EPC Now Shipping 100V, 2mΩ GaN FET for Space-Constrained Applications
EPC's EPC2071 offers designers a smaller, more-efficient device than silicon MOSFETs for high-performance, space-constrained applications.