A new method to confine and absorb infrared (IR) light with GaN nanostructures can help develop highly efficient infrared absorbers, emitters,…
EPC has expanded its selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 150V…
The collaboration can give a full play to the advantages of both parties in the industry, supply chain, talent, and…
EPC's 100V, 3.8mΩ EPC2306 GaN FET offers higher performance and smaller solution size for high power density applications.
EPC GaN FETs' low power dissipation enabled a higher current density for BRC Solar's next-gen power optimizer.
EPC's EPC7018 is a radiation-hardened GaN FET that has the lowest on-resistance currently available on the market.
EPC provides a forum for engineers to receive product support, ask questions, and share ideas on using GaN technology.
EPC has expanded its selection of low-voltage, off-the-shelf GaN transistors with the introduction of the EPC2066 GaN FET.
Using EPC's EPC2050 GaN FET, Sensitron was able to reduce the size of its solution by 60% while also further…
EPC's EPC2071 offers designers a smaller, more-efficient device than silicon MOSFETs for high-performance, space-constrained applications.