GaN HEMTs Promising Future for Next-Gen Power Semiconductor
GaN HEMTs feature low operating resistance and a high breakdown voltage, which makes them promising as a next-generation power semiconductor.
SiC MOSFETs Bring Next-Gen EV Efficiency Gains
Cree has expanded its product portfolio with the release of its Wolfspeed 650V SiC MOSFETs...
Wide Bandgap Semiconductors Stage a Power Play
The wide bandgap semiconductor market is seen headed north of $1 billion, based on their adoption in power electronics...
RF/Microwave to Lead Power Transistor Recovery in 2021
The total power transistor market is expected to fall 7% in 2020 because of the Covid-19 virus crisis, but sales…
GaN Transistors Ready for Launch Into Space
GaN power transistors are an ideal choice for power and RF applications to support extreme space missions with exceptionally high…
GaN and SiC Power Semiconductor Markets Set to Pass $1Bn Mark in 2021
Market energized by demand from hybrid & electric vehicles, power supplies and photovoltaic inverters...
New ZVS Buck Regulators available in BGA tin-lead package
Vicor has released two new ZVS buck regulators the PI3323 and the PI3325, with an extended operating temperature range of…
Electric Vehicles Are Switching To SiC Technology
Car manufacturers are working on fast-charging systems aimed at facilitating the use of electric cars. Wide-bandgap semiconductor SiC is central…
Gen 4 SiC Technology Gets Ready for Rollout
The advantages of SiC devices for use in power electronics are driven by the wide-bandgap semiconductor’s high material performance, high…
Markets Look to WBG Devices to Boost Power Efficiency
As the market continues its race toward more power, the industry is moving away from silicon in favor of wide-bandgap…