Sensitron and EPC Collaborate on High-Power Density 350V GaN Half-Bridge IPM
Using EPC's EPC2050 GaN FET, Sensitron was able to reduce the size of its solution by 60% while also further…
Mouser Electronics Empowers Engineers Through Extensive Power Management Resources and Solutions
Mouser Electronics is offering engineers and designers an expansive resource for power management information.
Tanaka Develops Brazing Filler Metal/Copper Composite Material for Power Devices
Tanaka has developed an active brazing filler metal/copper composite material that can be used as next-generation heat sinks for power…
GaN FETs Enable EVs & Industrial Power Designs
The company claims its next generation of 600-V and 650-V GaN FETs for automotive and other industrial applications achieve 99%…
Automotive IC Revenue to Reach $21B in 2021
Global automotive IC revenue to reach US$21 Billion in 2021, with IDMs likely to benefit ahead of time, says TrendForce...
Why Test & Measurement Matter to Wide Bandgap Semiconductors?
Keysight's Alan Wadsworth and Mike Hawes review the critical aspects of Test and Measurement for analyzing wide-bandgap solutions.
Testing of GaN to Ensure the Quality and Reliability for Power Systems
GaN transistors can offer superior performance — but what about quality…
Bringing GaN-based Power Devices to Market
ST presented MasterGaN, a platform that integrates a half-bridge driver based on silicon technology with a pair of gallium nitride…
GaN HEMTs Promising Future for Next-Gen Power Semiconductor
GaN HEMTs feature low operating resistance and a high breakdown voltage, which makes them promising as a next-generation power semiconductor.
SiC MOSFETs Bring Next-Gen EV Efficiency Gains
Cree has expanded its product portfolio with the release of its Wolfspeed 650V SiC MOSFETs...